ULIS 2009

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ULIS 2009
10th International Conference on Ultimate Integration on Silicon
Dates Mar 19, 2009 (iCal) - Mar 20, 2009
Homepage: www.fz-juelich.de/conference/ULIS2009
Location: Aachen, Germany
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Important dates
Submissions: Jan 23, 2009
Notification: Feb 15, 2009
Table of Contents

About ULIS conference

The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.
This year edition will feature a tutorial session on 'Process and Device Issues from a Circuit Point of View'.
Best Papers

Accepted papers will be published in the Conference Proceedings (on paper) and on IEEExplore.
A limited number of the best oral papers presented at the conference will be selected for publication in a special issue with peer review of Solid State Electronics.
Scientific Program

Topics for original contributions to be submitted to the ULIS 2008 Conference include, but are not limited to:

    * Nanometer scale devices: physics, technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.
    * CMOS scaling perspectives; device / circuit level performance evaluation; switches and memory scaling.
    * New channel materials for CMOS electronics: strained Si, strained SOI, SiGe, GOI, III-V and high mobility materials for MOSFET; carbon based electronics; carbon nanotubes; graphene based devices.
    * Thin gate dielectrics: first and second generation high-k materials for switches and memory.
    * Alternative transistor architectures including PDSOI, FDSOI, DGSOI, FinFETs, MuGFETs, vertical MOSFET, IMOS and tunnel FET structures. Benchmarking of new architectures w.r.t. bulk CMOS.
    * One dimensional and zero dimensional structures: nanowires, nanotubes, nanodots. Nanowire and nanotube based interconnects; nanocrystal based NVM memory cells.
    * Variability and fluctuation phenomena in electronic switches and memory devices. Single electron, few electron, discrete dopant and discrete charge effects in scaled electron devices.
    * Advanced physics based modeling and simulation of nanoscale switches and memory. First principle and ab-initio modeling of devices, materials and interfaces for CMOS.
    * Quasi ballistic, ballistic and quantum transport in nanoscale devices. Compact modeling of nanoscale devices. Modeling and management of thermal effects. Benchmarking of modeling approaches.
    * Process characterization through device parameter extraction, device and electrical characterization of nanometer scale technologies.
    * CMOS compatible molecular and quantum devices; non conventional nanodevices for sensors, actuators and bioelectronics. NanoCMOS to bio- and opto- interfaces.

Invited Speakers

Four distinguished invited speakers from America, Asia and Europe will open the sessions of the two-day conference programme providing long term views of nanoelectronics development worldwide.

A tutorial session will be organized on March 18, 2009, prior to the conference, in collaboration with the Training Program of the NanoSIL project. At the tutorial, worldwide recognized experts will provide to researchers and engineers an introduction to the newest developments in technology, modelling and characterization of nanodevices.


Further information about the conference can be directly asked to ulis@ulisconference.org 

This CfP was obtained from WikiCFP

Facts about "ULIS 2009"
AcronymULIS 2009 +
End dateMarch 20, 2009 +
Event typeConference +
Has coordinates50° 46' 35", 6° 5' 2"Latitude: 50.77635
Longitude: 6.0838611111111
Has location cityAachen +
Has location countryCategory:Germany +
Homepagehttp://www.fz-juelich.de/conference/ULIS2009 +
IsAEvent +
NotificationFebruary 15, 2009 +
Start dateMarch 19, 2009 +
Submission deadlineJanuary 23, 2009 +
Title10th International Conference on Ultimate Integration on Silicon +